Method to form memory cells separated by a void-free dielectric structure

ABSTRACT

Various embodiments of the present application are directed towards an integrated chip comprising memory cells separated by a void-free dielectric structure. In some embodiments, a pair of memory cell structures is formed on a via dielectric layer, where the memory cell structures are separated by an inter-cell area. An inter-cell filler layer is formed covering the memory cell structures and the via dielectric layer, and further filling the inter-cell area. The inter-cell filler layer is recessed until a top surface of the inter-cell filler layer is below a top surface of the pair of memory cell structures and the inter-cell area is partially cleared. An interconnect dielectric layer is formed covering the memory cell structures and the inter-cell filler layer, and further filling a cleared portion of the inter-cell area.

REFERENCE TO RELATED APPLICATION

This Application claims priority to U.S. Provisional Application No.62/749,328, filed on Oct. 23, 2018, the contents of which are herebyincorporated by reference in their entirety.

BACKGROUND

Many modern-day electronic devices include non-volatile memory.Non-volatile memory is electronic memory that is able to store data inthe absence of power. A promising candidate for the next generation ofnon-volatile memory is resistive random-access memory (RRAM). RRAM has arelatively simple structure, consumes a small cell area, has a lowswitching voltage, has fast switching times, and is compatible withcomplementary metal-oxide-semiconductor (CMOS) logic fabricationprocesses.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A and 1B illustrate cross-sectional views of some embodiments ofan integrated chip comprising memory cell structures separated by avoid-free dielectric structure.

FIG. 2 illustrates a cross-sectional view of some more detailedembodiments of the integrated chip of FIG. 1A.

FIGS. 3A-3E illustrate cross-sectional views of some alternativeembodiments of the integrated chip of FIG. 2.

FIGS. 4A and 4B illustrate cross-sectional views of some embodiments ofan integrated chip in which one-transistor one-resistor (1T1R) cellstructures comprise the memory cell structures of FIGS. 1A and 1B.

FIG. 5 illustrates a top layout of some embodiments of an integratedchip comprising an array of memory cell structures separated by avoid-free dielectric structure.

FIGS. 6A and 6B illustrate cross-sectional views of some embodiments ofthe integrated chip of FIG. 5.

FIGS. 7-17 illustrates a series of cross-sectional views of someembodiments of a method for forming an integrated chip comprising memorycell structures separated by a void-free dielectric structure.

FIG. 18 illustrates a block diagram of some embodiments of the method ofFIGS. 7-17.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A method for forming a resistive random-access memory (RRAM) array may,for example, comprise: forming a plurality of RRAM cell structures in aplurality of rows and a plurality of columns; depositing an interconnectdielectric layer covering the RRAM cell structures; and formingconductive lines inset into the interconnect dielectric layer andextending along individual columns of the RRAM array. The conductivelines electrically couple with top electrodes of RRAM cell structures inthe individual columns and may, for example, be word lines or bit linesdepending upon a memory architecture of the RRAM array. The interconnectdielectric layer may, for example, be or comprise an extreme low k (ELK)dielectric material or some other suitable dielectric material. An ELKdielectric material may, for example, have a dielectric constant lessthan about 2.5, 2.0, or some other suitable value.

A challenge with the method is that the interconnect dielectric layerhas indents between neighboring RRAM cell structures because of thelower elevation between the neighboring RRAM cell structures. Becausethe bit lines are formed inset into the interconnect dielectric layer,the bit lines conform to the indents and hence have downward protrusionsalong the individual columns. The downward protrusions decrease in widthfrom top to bottom and hence have bottom surfaces with small radiuses ofcurvature. The small radiuses of curvature increase electric fieldstrength and hence increase the likelihood of dielectric breakdown.Another challenge with the method is that a row-wise pitch of the RRAMarray is small and inter-cell areas separating RRAM cell structuresalong the rows have high aspect ratios (i.e., high ratios of height towidth). Because of the high aspect ratios, the interconnect dielectriclayer forms with voids at the inter-cell areas. The voids areelectrically insulating but have a lower dielectric constant than theinterconnect dielectric layer. Accordingly, the voids have a higherlikelihood of dielectric breakdown than the interconnect dielectriclayer. Further, the voids neighbor the downward protrusions and arehence at increased risk of dielectric breakdown due to the high electricfield strength at the downward protrusions.

During use of RRAM cell structures, high voltages may be applied acrossthe RRAM cell structures to set and reset the RRAM cell structures. Thehigh voltages, the voids, the downward protrusions, and the ELKdielectric material may contribute to dielectric breakdown and henceleakage paths at the inter-cell areas. The leakage paths may extend fromthe conductive lines, and hence the top electrodes to the RRAM cellstructures, to bottom electrodes of the RRAM cell structures through thedownward protrusions, the interconnect dielectric layer, and the voids.The leakage paths may, in turn, lead to read and/or write disturbanceand hence a decrease in reliability of the RRAM array.

Various embodiments of the present application are directed towards amethod for forming an integrated chip comprising memory cells separatedby a void-free dielectric structure. The memory cells may, for example,be RRAM cells or some other suitable memory cells. In some embodiments,the method comprises: forming a pair of memory cell structures, wherethe memory cell structures are separated by an inter-cell area having ahigh aspect ratio (HAR); forming an inter-cell filler layer covering thememory cell structures, and further filling the inter-cell area, wherethe inter-cell filler layer is formed by a HAR deposition process;recessing the inter-cell filler layer until an upper surface of theinter-cell filler layer is below an upper surface of the memory cellstructures and the inter-cell area is partially cleared; and forming aninterconnect dielectric layer covering the memory cell structures andthe inter-cell filler layer, and further filling a cleared portion ofthe inter-cell area. A HAR may, for example, be a ratio of height towidth greater than about 1:1, about 2:1, about 2.5:1.0, about 5:1, orsome other suitable ratio. The HAR deposition process may, for example,be or comprise a high deposition rate (HDR) tetraethyl orthosilicate(TEOS) deposition process or some other suitable HAR and/or HDRdeposition process. The interconnect dielectric layer may, for example,be or comprise an ELK dielectric material and/or some other suitabledielectric material(s).

Because the inter-cell filler layer is formed by the HAR depositionprocess, the inter-cell filler layer forms filling the inter-cell areawithout voids even though the inter-cell area has a HAR. After therecessing, the inter-cell filler layer partially fills the inter-cellarea. Further, the cleared portion of the inter-cell area has a loweraspect ratio than an entirety of the inter-cell area. Because of thislower aspect ratio, the interconnect dielectric layer forms filling thecleared portion of the inter-cell area without voids. By preventingformation voids at the inter-cell area, the risk of dielectric breakdownat the inter-cell area is reduced. Dielectric breakdown at theinter-cell area has the potential to form leakage paths between top andbottom electrodes of the memory cell structures. Hence, reducing thelikelihood of dielectric breakdown at the inter-cell area reduces therisk of read and/or write disturbance to the memory cell structures andincreases the read and/or write reliability of the memory cellstructures.

Because the process for forming and recessing the inter-cell fillerlayer can be performed without costly photomasks, voids can be preventedat the inter-cell area in a cost-effective manner. Further, because theprocess for preventing voids at the inter-cell area can be performed byan HDR TEOS deposition process and an etch back, the process iscompatible with logic and/or complementary metal-oxide semiconductor(CMOS) manufacturing processes.

With reference to FIG. 1A, a cross-sectional view 100A of someembodiments of an integrated chip comprising a first memory cellstructure 102 a and a second memory cell structure 102 b is provided.The first and second memory cell structures 102 a, 102 b are separatedfrom each other by a void-free dielectric structure 104 that is free ofvoids at a first inter-cell area 106 a between the first and secondmemory cell structures 102 a, 102 b. As used herein, a void may, forexample, be a vacuum-sealed area and/or a gas-filled area. The void-freedielectric structure 104 comprises an inter-cell filler layer 108 and anupper interconnect dielectric layer 110. The inter-cell filler layer 108and the upper interconnect dielectric layer 110 each partially fill thefirst inter-cell area 106 a. Further, the upper interconnect dielectriclayer 110 overlies the inter-cell filler layer 108 and the first andsecond memory cell structures 102 a, 102 b.

The first inter-cell area 106 a has a HAR (i.e., a high ratio of heightH to width W₁). The HAR may, for example, be about 1:1-5:1, about1:1-2.5:1, about 2.5:1-5:1, or some other suitable ratio(s). Further,the HAR may, for example, be greater than about 1:1, about 2:1, about2.5:1, about 5:1, or some other suitable ratio(s). Because of the HAR,the upper interconnect dielectric layer 110 would form, or would have ahigh likelihood of forming, with a void at the first inter-cell area 106a if the inter-cell filler layer 108 were omitted. However, because theinter-cell filler layer 108 partially fills the first inter-cell area106 a, a remainder of the first inter-cell area 106 a has a low aspectratio (LAR) compared to the entirety of the first inter-cell area 106 a.Accordingly, the upper interconnect dielectric layer 110 forms without,or has a high likelihood of forming without, a void at the firstinter-cell area 106 a.

As seen hereafter, the inter-cell filler layer 108 is formed by a HARdeposition process so the inter-cell filler layer 108 does not form witha void at the first inter-cell area 106 a. In some embodiments, theinter-cell filler layer 108 is or comprises TEOS oxide and/or the HARdeposition process is or comprises an HDR TEOS deposition process. Othermaterial(s) and/or other HAR deposition process(es) is/are, however,amenable. The HDR TEOS process may, for example, have a high depositionrate at least about 3, 5, or 10 times greater than that of the upperinterconnect dielectric layer 110. Other values are, however, amenable.

By forming the upper interconnect dielectric layer 110 and theinter-cell filler layer 108 without voids at the first inter-cell area106 a, the likelihood of dielectric breakdown at the first inter-cellarea 106 a is reduced. A void in the upper interconnect dielectric layer110 and/or the inter-cell filler layer 108 is electrically insulatingbut has a lower dielectric constant than the upper interconnectdielectric layer 110 and the inter-cell filler layer 108. Hence, thevoid is more prone to dielectric breakdown than the upper interconnectdielectric layer 110 and the inter-cell filler layer 108. Accordingly,eliminating voids at the first inter-cell area 106 a reduces thelikelihood of dielectric breakdown at the first inter-cell area 106 a.

Dielectric breakdown at the first inter-cell area 106 a has thepotential to form leakage paths from bottom electrodes (not shown) ofthe first and second memory cell structure 102 a, 102 b to conductivelines CL. The conductive lines CL respectively overlie the first andsecond memory cell structures 102 a, 102 b and are electrically coupledto top electrodes (not shown) of the first and second memory cellstructures 102 a, 102 b by top electrode vias TV. The conductive linesCL may be bit lines or word lines depending upon a memory architectureof the first and second memory cell structures 102 a, 102 b. Forexample, the conductive lines CL may be word lines when the first andsecond memory cell structures 102 a, 102 b have a cross-point memoryarchitecture. Because the conductive lines CL are electrically coupledto the top electrodes of the first and second memory cell structures 102a, 102 b, the leakage paths may result in read and/or write disturbanceto the first and second memory cell structures 102 a, 102 b. Hence, byeliminating voids at the first inter-cell area 106 a, the leakage pathsmay be prevented and the reliability of the first and second memory cellstructures 102 a, 102 b may be increased. Further, manufacturing yieldsof the integrated chip may be increased.

In some embodiments, the first and second memory cell structures 102 a,102 b are RRAM cell structures or some other suitable memory cellstructures. In some embodiments, the upper interconnect dielectric layer110 is or comprises an ELK dielectric material and/or some othersuitable dielectric material(s). The ELK dielectric material may, forexample, have a dielectric constant less than about 2.5, 2.0, or someother suitable value and/or may, for example, be or comprise poroussilicon oxycarbide (SiOC) and/or some other suitable ELK dielectricmaterial(s). In some embodiments, the upper interconnect dielectriclayer 110 has a smaller dielectric constant than the inter-cell fillerlayer 108. For example, the upper interconnect dielectric layer 110 maybe or comprise an ELK dielectric material and the inter-cell fillerlayer 108 may be or comprise TEOS oxide. Other materials are, however,amenable.

The first and second memory cell structures 102 a, 102 b are in aninterconnect structure 112. The interconnect structure 112 comprises thevoid-free dielectric structure 104, a via dielectric layer 114, and alower interconnect dielectric layer 116. The via dielectric layer 114overlies the lower interconnect dielectric layer 116, and the void-freedielectric structure 104 overlies the via dielectric layer 114. Further,the interconnect structure 112 comprises a plurality of wires 118 and aplurality of vias 120 stacked in the various dielectric layers (e.g.,the upper and lower interconnect dielectric layers 110, 116) of theinterconnect structure 112. The plurality of wires 118 and the pluralityof vias 120 define conductive paths electrically coupling the first andsecond memory cell structures 102 a, 102 b to other devices and/orcomponents (not shown) of the integrated chip. The plurality of wires118 comprise the conductive lines CL, and the plurality of vias 120comprise the top electrode vias TV. Further, the plurality of vias 120comprise bottom electrode vias BV respectively underlying the first andsecond memory cell structures 102 a, 102 b in the via dielectric layer114.

In some embodiments, the via dielectric layer 114 is or comprise siliconcarbide and/or some other suitable dielectric material(s). In someembodiments, the lower interconnect dielectric layer 116 is or comprisesan ELK dielectric material and/or some other suitable dielectricmaterial(s). In some embodiments, the lower interconnect dielectriclayer 116 is or comprise the same material as the upper interconnectdielectric layer 110. In some embodiments, the wires 118 and/or the vias120 are or comprise copper, aluminum, aluminum copper, tungsten, someother suitable metal(s), titanium nitride, tantalum nitride, some othersuitable conductive material(s), or any combination of the foregoing.

With reference to FIG. 1B, a cross-sectional view 100B of someembodiments of the integrated chip of FIG. 1A is provided along an axisorthogonal to an axis along which the cross-sectional view 100A of FIG.1A is taken. For example, the cross-sectional view 100A of FIG. 1A maybe taken along an axis extending in a X dimension, whereas thecross-sectional view 100B of FIG. 1B may be taken along an axisextending in a Y dimension, or vice versa. The integrated chip comprisesthe first memory cell structure 102 a and further comprises a thirdmemory cell structure 102 c. The third memory cell structure 102 c may,for example, be as the second memory cell structure 102 b of FIG. 1A isillustrated and/or described.

The first and third memory cell structures 102 a, 102 c are separatedfrom each other by the void-free dielectric structure 104. The void-freedielectric structure 104 is free of voids at a second inter-cell area106 b between the first and third memory cell structures 102 a, 102 c.The second inter-cell area 106 b has an aspect ratio (i.e., a ratio ofheight H to width W₂) that is low compared to that of first inter-cellarea 106 a (see FIG. 1A). Hence, the upper interconnect dielectric layer110 would form without, or would have a high likelihood of formingwithout, a void at the second inter-cell area 106 b even if theinter-cell filler layer 108 were omitted.

Because of the lower elevation at the second inter-cell area 106 b, theupper interconnect dielectric layer 110 forms with an indent overlyingthe second inter-cell area 106 b. Further, because the conductive lineCL overlying and shared by the first and third memory cell structures102 a, 102 c is inset into the upper interconnect dielectric layer 110,the conductive line CL has a downward protrusion filling the indent. Theindent and the downward protrusion decrease in width from top to bottomand may, for example, have a V-shaped profile and/or some other suitableprofile. Further, the downward protrusion has a bottom surface with asmall radius of curvature compared to that of a flat surface. The smallradius of curvature, in turn, increases electric field strength at thedownward protrusion.

If the inter-cell filler layer 108 were omitted, the indent and thedownward protrusion would be large and extend to close proximity tobottom electrodes (not shown) of the first and third memory cellstructures 102 a, 102 c. The close proximity and the increased electricfield strength would collectively lead to a high risk of dielectricbreakdown at the second inter-cell area 106 b. The high risk ofdielectric breakdown would, in turn, lead to a high risk of leakagepaths extending from the conductive line CL, through the secondinter-cell area 106 b, to the bottom electrodes. Such leakage paths mayresult in read and/or write disturbance to the first and third memorycell structures 102 a, 102 c and may hence decrease the reliability ofthe first and third memory cell structures 102 a, 102 c.

Because the upper interconnect dielectric layer 110 is formed over theinter-cell filler layer 108, the indent and the downward protrusion aresmall and distal from the bottom electrodes of the first and thirdmemory cell structures 102 a, 102 c. Accordingly, the likelihood ofdielectric breakdown at the second inter-cell area 106 b is low despitethe increased electric field strength at the bottom surface of thedownward protrusion. Due to the low likelihood of dielectric breakdown,the likelihood of leakage paths extending from the conductive line CL,through the second inter-cell area 106 b, to the bottom electrodes islow. Hence, the inter-cell filler layer 108 decreases the likelihood ofread and/or write disturbance to the first and third memory cellstructures 102 a, 102 c and further increases the read and/or writereliability of the first and third memory cell structures 102 a, 102 c.

With reference to FIG. 2, a cross-sectional view 200 of some moredetailed embodiments of the integrated chip of FIG. 1A is provided inwhich the first and second memory cell structures 102 a, 102 b compriseindividual bottom electrodes 202, individual data storage elements 204,individual top electrodes 206, individual hard masks 208, and individualsidewall spacers 210. Note that only one of the bottom electrodes 202,only one of the data storage elements 204, only one of the topelectrodes 206, only one of the hard masks 208, and only some segmentsof the sidewall spacers 210 are labeled.

The data storage elements 204 respectively overlie the bottom electrodes202, the top electrodes 206 respectively overlie the data storageelements 204, and the hard masks 208 respectively overlie the topelectrodes 206. Further, the sidewall spacers 210 are on sidewalls ofthe top and bottom electrodes 206, 202. The bottom electrodes 202 and/orthe top electrodes 206 may, for example, be or comprise a metal and/orsome other suitable conductive material(s). The data storage elements204 may be or comprise, for example, a high k dielectric material (e.g.,hafnium oxide or some other suitable high k dielectric material), aferroelectric material, magnetic tunnel junctions (MTJs), some othersuitable data storage material(s) and/or structure(s), or anycombination of the foregoing. The sidewall spacers 210 may be orcomprise, for example, silicon nitride and/or some other suitabledielectric(s). Further, the sidewall spacers 210 may be or comprise, forexample, the same material as the hard masks 208. In some embodiments,the first and second memory cell structures 102 a, 102 b are RRAM cellstructures, ferroelectric random-access memory (FeRAM) cell structures,magnetoresistive random-access memory (MRAM) cell structures, or someother suitable memory cell structures.

The bottom electrode vias BV respectively underlie the first and secondmemory cell structures 102 a, 102 b and comprise individual bottom vialiners 212 and individual bottom via bodies 214. Note that only one ofthe bottom via liners 212 and only one of the bottom via bodies 214 arelabeled. The bottom via liners 212 respectively cup undersides of thebottom via bodies 214 to prevent material of the bottom via bodies 214from diffusing to underlying wires and/or to prevent material of theunderlying wires from diffusing to the bottom via bodies 214. The bottomvia liners 212 may be or comprise, for example, titanium nitride,tantalum nitride, some other suitable liner material(s), or anycombination of the foregoing. The bottom via bodies 214 may be orcomprise, for example, platinum, iridium, ruthenium, tungsten, silver,copper, nickel, some other suitable conductive material(s), or anycombination of the foregoing.

The void-free dielectric structure 104 further comprises an etch stoplayer 216 and an upper interconnect dielectric liner 218. The etch stoplayer 216 lines the first and second memory cell structures 102 a, 102 band separates the inter-cell filler layer 108 from the sidewall spacers210 and the via dielectric layer 114. The upper interconnect dielectricliner 218 lines the etch stop layer 216 and the inter-cell filler layer108. Further, the upper interconnect dielectric liner 218 separates theetch stop layer 216 and the inter-cell filler layer 108 from the upperinterconnect dielectric layer 110. The etch stop layer 216 may be orcomprise, for example, silicon carbide and/or some other suitabledielectric(s). In some embodiments, the etch stop layer 216 is orcomprises the same dielectric material as the via dielectric layer 114.The upper interconnect dielectric liner 218 may be or comprise, forexample, TEOS oxide and/or other some other suitable dielectric(s). Insome embodiments, the upper interconnect dielectric liner 218 and theinter-cell filler layer 108 are or comprise the same material (e.g.,TEOS oxide or some other suitable material), except that the inter-cellfiller layer 108 is formed by a HDR deposition process and the upperinterconnect dielectric liner 218 is formed by a comparatively slowdeposition process (i.e., a non-HDR deposition process).

While the bottom electrodes 202 are shown as being separate from thebottom electrode vias BV, the bottom electrodes 202 and the bottomelectrode vias BV may be fully or partially integrated in alternativeembodiments. For example, the bottom electrodes 202 and the bottom viabodies 214, but not the bottom via liners 212, may be integrated so asto be regions of the same deposition and/or block of material. Asanother example, the bottom electrodes 202, the bottom via bodies 214,and the bottom via liners 212 may be integrated so as to be regions ofthe same deposition and/or block of material.

With reference to FIG. 3A, a cross-sectional view 300A of somealternative embodiments of the integrated chip of FIG. 2 is provided inwhich the inter-cell filler layer 108 covers the first and second memorycell structures 102 a, 102 b and has a top surface 108 t conforming tounderlying topography.

With reference to FIG. 3B, a cross-sectional view 300B of somealternative embodiments of the integrated chip of FIG. 2 is provided inwhich the inter-cell filler layer 108 covers the first and second memorycell structures 102 a, 102 b and has a top surface 108 t that is planaror substantially planar.

With reference to FIG. 3C, a cross-sectional view 300C of somealternative embodiments of the integrated chip of FIG. 2 is provided inwhich the inter-cell filler layer 108 has a top surface that is planaror substantially planar.

With reference to FIG. 3D, a cross-sectional view 300D of somealternative embodiments of the integrated chip of FIG. 2 is provided inwhich the bottom electrodes 202 defines the bottom electrode vias BV.The bottom electrodes 202 protrude through the via dielectric layer 114and are depressed at the bottom electrode vias BV. The data storageelements 204, the top electrodes 206, and the hard masks 208 are stackedover and conform to the bottom electrodes 202. Further, the data storageelements 204, the top electrodes 206, and the hard masks 208 aredepressed directly over the bottom electrode vias BV. Note that only oneof the bottom electrodes 202 is labeled, only one of the data storageelements 204 is labeled, only one of the top electrodes 206 is labeled,and only one of the hard masks 208 is labeled.

The first and second memory cell structures 102 a, 102 b furthercomprise individual cap layers 302 between the data storage elements 204and the top electrodes 206. The cap layers 302 are or comprise aconductive material having a higher reactivity with oxygen than the topelectrodes 206. Such oxygen reactivity may, for example, be quantifiedin terms of the amount of energy to trigger a reaction between theconductive material and oxygen. The higher the reactivity, the lessenergy, and vice versa. The cap layers 302 may, for example, increaseavailable oxygen ions and oxygen vacancies for switching when the firstand second memory cell structures 102 a, 102 b are RRAM cell structures.Hence, the cap layers 302 may, for example, increase switching windowsof the first and second memory cell structures 102 a, 102 b. In someembodiments, the top electrodes 206 are or comprise tantalum, aluminum,tungsten, ruthenium, platinum, nickel, copper, gold, some other suitablematerial(s), or any combination of the foregoing, whereas the cap layers302 are or comprise hafnium, titanium, zirconium, lanthanum, some othersuitable material(s), or any combination of the foregoing.

With reference to FIG. 3E, a cross-sectional view 300E of somealternative embodiments of the integrated chip of FIG. 3D is provided inwhich the bottom electrodes 202 define the bottom electrode vias BV andhave top surfaces that are planar or substantially planar. For example,the bottom electrodes 202 may have T-shaped profiles or some othersuitable profiles. Also, the first and second memory cell structures 102a, 102 b have individual bottom electrode liners 304 respectivelycupping undersides of the bottom electrodes 202 to prevent material ofthe bottom electrodes 202 from diffusing to underlying wires and/or toprevent material of the underlying wires from diffusing to the bottomelectrodes 202. The bottom electrode liners 304 may be or comprise, forexample, titanium nitride, tantalum nitride, some other suitable linermaterial(s), or any combination of the foregoing. The bottom electrodes202 may be or comprise, for example, platinum, iridium, ruthenium,tungsten, silver, copper, nickel, some other suitable conductivematerial(s), or any combination of the foregoing.

While FIGS. 3D and 3E include the cap layers 302, the cap layers 302 maybe omitted in alternative embodiments. Similarly, while FIG. 3E includethe bottom electrode liners 304, the bottom electrode liners 304 may beomitted in alternative embodiments. While FIGS. 2 and 3A-3C do notinclude the cap layers 302 of FIGS. 3D and 3E, the cap layers 302 may beincluded between the top electrodes 206 and the data storage elements204 in alternative embodiments. While FIGS. 3C-3E include an inter-cellfiller layer 108 recessed below a top surface of the first and secondmemory cell structures 102 a, 102 b, the inter-cell filler layer 108 maycover the first and second memory cell structures 102 a, 102 b asillustrated in FIG. 3A and/or FIG. 3B in alternative embodiments. WhileFIGS. 2 and 3A-3E are illustrated with the etch stop layer 216 and theupper interconnect dielectric liner 218, the etch stop layer 216 and/orthe upper interconnect dielectric liner 218 may be omitted inalternative embodiments.

While FIGS. 2 and 3A-3E are taken along the same axis as FIG. 1A,alternative embodiments of FIGS. 2 and 3A-3E may be taken along the sameaxis as FIG. 1B. In such alternative embodiments, the second memory cellstructure 102 b is replaced with a third memory cell structure 102 chaving the same structure as the first memory cell structure 102 a.Further, individual conductive lines CL of the first and second memorycell structures 102 a, 102 b are replaced with a common conductive lineCL common to the first and third memory cell structures 102 a, 102 c asillustrated in FIG. 1B.

With reference to FIG. 4A, a cross-sectional view 400A of someembodiments of an integrated chip is provided in which a firstone-transistor one-resistor (1T1R) cell structure 402 a and a second1T1R cell structure 402 b respectively comprise the first and secondmemory cell structures 102 a, 102 b of FIG. 1A. The first and second1T1R cell structures 402 a, 402 b further comprise individual drainregions 404 and individual drain-side conductive paths 406. Note thatonly one of the drain regions 404 is labeled.

The drain regions 404 are in a substrate 408 and are electricallyseparated by a trench isolation structure 410. The drain regions 404 arepart of access transistors used to individually select the first andsecond memory cell structures 102 a, 102 b when the first and secondmemory cell structures 102 a, 102 b are in an array. The substrate 408may, for example, be a bulk silicon substrate, a silicon-on-insulator(SOI) substrate, or some other suitable semiconductor substrate. Thetrench isolation structure 410 comprises silicon oxide and/or some othersuitable dielectric material(s). The trench isolation structure 410 may,for example, be a shallow trench isolation (STI) structure or some othersuitable trench isolation structure.

The drain-side conductive paths 406 electrically couple the drainregions 404 to bottom electrodes (not shown) of the first and secondmemory cell structures 102 a, 102 b. Further, the drain-side conductivepaths 406 are defined by the interconnect structure 112. Theinterconnect structure 112 comprises a plurality of wires 118 and aplurality of vias 120, and the wires 118 and the vias 120 arealternatingly stacked. The wires 118 comprise bit lines BL respectivelyoverlying the first and second memory cell structures 102 a, 102 b andrespectively electrically coupled to top electrodes (not shown) of thefirst and second memory cell structures 102 a, 102 b by the vias 120.The wires 118 and the vias 120 may be or comprise, for example, copper,aluminum, aluminum copper, titanium, tungsten, titanium nitride, someother suitable conductive material(s), or any combination of theforegoing.

With reference to FIG. 4B, a cross-sectional view 400B of someembodiments of the integrated chip of FIG. 4A is provided along an axisorthogonal to an axis along which the cross-sectional view 400A of FIG.4A is taken. The first 1T1R cell structure 402 a and a third 1T1R cellstructure 402 c respectively comprise the first and third memory cellstructures 102 a, 102 c of FIG. 1B. The first and third 1T1R cellstructures 402 a, 402 b further comprise individual drain-sideconductive paths 406, individual access transistors 412, and individualsource-side conductive paths 414. Note that only one of the drain-sideconductive paths 406, only one of the access transistors 412, and onlyone of the source-side conductive paths 414 are labeled.

The access transistors 412 on the substrate 408, between the substrate408 and the interconnect structure 112. Further, the access transistors412 are electrically separated from each other by the trench isolationstructure 410. The access transistors 412 comprise individual drainregions 404, individual source regions 416, individual gate dielectriclayers 418, and individual gate electrodes 420. Note that only one ofthe drain regions 404, only one of the source regions 416, only one ofthe gate dielectric layers 418, and only one of the gate electrodes 420are labeled. The gate electrodes 420 respectively overlie the gatedielectric layers 418 and define word lines in embodiments in which thefirst and third memory cell structures 102 a, 102 c are in an array. Thedrain and source regions 404, 416 are in a substrate 408. The drainregions 404 respectively border drain sides of the gate electrodes 420,and the source regions 416 respectively border source sides of the gateelectrodes 420.

The drain-side conductive paths 406 electrically couple the drainregions 404 to the first and third memory cell structures 102 a, 102 c,and the source-side conductive paths 414 electrically couple the sourceregions 416 to source lines SL. Note that only one of the source linesSL is labeled. The drain-side and source-side conductive paths 406, 414are defined by the plurality of wires 118 and the plurality of vias 120.

While FIG. 4A is illustrated using embodiments of the first and secondmemory cell structures 102 a, 102 b and the bottom electrode vias BV inFIG. 1A, embodiments in any one or combination of FIGS. 2 and 3A-3E mayalternatively be used. While FIG. 4B is illustrated using embodiments ofthe first and third memory cell structures 102 a, 102 c and the bottomelectrode vias BV in FIG. 1B, embodiments of the first memory cellstructure 102 a and the bottom electrode vias BV in any one orcombination of FIGS. 2 and 3A-3E may alternatively be used for both thefirst and third memory cell structures 102 a, 102 c. While FIGS. 4A and4B are illustrated using embodiments of the void-free dielectricstructure 104 in FIGS. 1A and 1B, embodiments in any one of FIGS. 3A and3B may alternatively be used.

With reference to FIG. 5, a top layout 500 of some embodiments of anintegrated chip comprising an array of memory cell structures 102 atleast partially separated by an inter-cell filler layer 108 is provided.Note that only some of the memory cell structures 102 are labeled. Asdiscussed above, the inter-cell filler layer 108 reduces the risk ofdielectric breakdown in an interconnect dielectric layer (not shown)that covers the memory cell structures 102 (when viewed in crosssection). Such dielectric breakdown is exacerbated by use of ELKdielectric materials (due to the low dielectric constants) andpotentially leads to leakage paths between top and bottom electrodes ofthe memory cell structures 102. In some embodiments, the inter-cellfiller layer 108 has a grid-shaped layout or some other suitable layout.

The memory cell structures 102 are at a memory region 502 of theintegrated chip and are in a plurality of rows and plurality of columns.The memory cell structures 102 have a first pitch P₁ along the rows, andfurther have a second pitch P₂ greater than the first pitch P₁ along thecolumns. The first pitch P₁ may, for example, be the same as the firstwidth W₁ in FIG. 1A, whereas the second pitch P₂ may, for example, bethe same as the second width W₂ in FIG. 1B. The memory cell structures102 may, for example, be as illustrated and/or described in any one orcombination of FIGS. 1A, 1B, 2, 3A-3E, 4A, and 4B. FIGS. 1A, 2, 3A-3E,and 4A may, for example, be taken along line A-A′ and/or FIGS. 1B and 4Bmay, for example, be taken along line B-B′. In some embodiments, thememory cell structures 102 partially define individual 1T1R cellstructures as illustrated and described with regard FIGS. 4A and 4B. Inother embodiments, the memory cell structures 102 partially defineindividual one-selector one-resistor (1S1R) cell structures or othersuitable cell structure(s).

Conductive lines CL extend respectively along the columns andelectrically couple with memory cell structures 102 in the respectivecolumns. The conductive lines CL may also be referred to as bit lines orword lines depending upon a memory architecture of the memory cellstructures 102. Peripheral devices 504 surround the memory cellstructures 102 at a peripheral region 506 of the integrated chip. Notethat only some of the conductive lines CL and some of peripheral devices504 are labeled. The peripheral devices 504 may, for example, be orcomprise transistors and/or other suitable semiconductor device(s).Further, the peripheral devices 504 may, for example, implementread/write circuitry and/or other suitable circuitry for operation ofthe memory cell structures 102.

With reference to FIGS. 6A and 6B, cross-sectional views 600A, 600B ofsome embodiments of the integrated chip of FIG. 5 are provided. Thecross-sectional view 600A of FIG. 6A may, for example, be taken alongline A-A′ in FIG. 5, whereas the cross-sectional view 600B of FIG. 6Bmay, for example, be taken along line B-B′ in FIG. 5. The memory cellstructures 102 are as the first and second memory cell structures 102 a,102 b of FIG. 2 are illustrated and the bottom electrode vias BV are asillustrated in FIG. 2. Further, the memory cell structures 102 areseparated by the void-free dielectric structure 104, which comprises theinter-cell filler layer 108, the upper interconnect dielectric layer110, the etch stop layer 216, and the upper interconnect dielectricliner 218. Note that only one of the memory cell structures 102 islabeled in each of FIGS. 6A and 6B and only one of the bottom electrodevias BV is labeled in each of FIGS. 6A and 6B. Further, note that theconstituent components of the memory cell structures 102 are onlylabeled once in each of FIGS. 6A and 6B.

While FIGS. 6A and 6B are illustrated using embodiments of the first andsecond memory cell structures 102 a, 102 b and the bottom electrode viasBV in FIG. 2, embodiments in FIGS. 3D and 3E may be used in alternativeembodiments. Further, while FIGS. 6A and 6B are illustrated usingembodiments of the void-free dielectric structure 104 in FIG. 2,embodiments in FIGS. 3A and 3B may be used in alternative embodiments.

With reference to FIGS. 7-17, a series of cross-sectional views 700-1700of some embodiments of a method for forming an integrated chipcomprising memory cell structures separated by a void-free dielectricstructure is provided. The cross-sectional views 700-1700 are takenalong an axis extending in an X dimension and may therefore, forexample, be taken along line A-A′ in FIG. 5. In alternative embodiments,the cross-sectional views 700-1700 may be taken along an axis extendingin a Y dimension and/or may be taken along line B-B′ in FIG. 5. Themethod may, for example, be performed to form the integrated chip in anyone or combination of FIGS. 1A, 1B, 2, 3A-3E, 4A, 4B, 5, 6A, and 6B.

As illustrated by the cross-sectional view 700 of FIG. 7, aninterconnect structure 112 is partially formed over a substrate (notshown). The interconnect structure 112 is formed at a memory region 502of the integrated chip being formed and is further formed at aperipheral region 506 of the integrated chip being formed. A top layoutof the memory region 502 and/or a top layout of the peripheral region506 may, for example, be as illustrated in FIG. 5. The interconnectstructure 112 comprises a lower interconnect dielectric layer 116, andfurther comprises a plurality of wires 118 and a plurality of vias (notshown). The wires 118 and the vias are alternatingly stacked in thelower interconnect dielectric layer 116 to define conductive paths toand/or from semiconductor devices (not shown) on the substrate. Examplesof the substrate, the vias, and the semiconductor devices areillustrated in FIGS. 4A and 4B.

Also illustrated by the cross-sectional view 700 of FIG. 7, a viadielectric layer 114 is formed on the interconnect structure 112. Athickness T₁ of the via dielectric layer 114 may, for example, be about300 angstroms, about 250-350 angstroms, or some other suitable value orrange of values.

As illustrated by the cross-sectional view 800 of FIG. 8, a pair ofbottom electrode vias BV is formed in the via dielectric layer 114. Thebottom electrode vias BV extend through the via dielectric layer 114 tounderlying wires and expand the interconnect structure 112. The bottomelectrode vias BV comprise individual bottom via liners 212 andindividual bottom via bodies 214. Note that only one of the bottom vialiners 212 and only one of the bottom via bodies 214 are labeled. Thebottom via liners 212 cup undersides of the bottom via liners 212 toprevent diffusion. For example, the bottom via liners 212 may preventmaterial from underlying wires from diffusing to the bottom via bodies214 and/or may prevent material of bottom via bodies 214 from diffusingto the underlying wires.

In some embodiments, a process for forming the bottom electrode vias BVcomprises: 1) patterning the via dielectric layer 114 to form viaopenings; 2) depositing a conductive liner layer covering the viadielectric layer 114 and lining the via openings; 3) depositing aconductive body layer covering the conductive liner layer and fillingthe via openings; and 4) performing a planarization into the conductiveliner and body layers until a top surface of the via dielectric layer114 is reached. Other processes for forming the bottom electrode vias BVare, however, amenable in alternative embodiments.

As illustrated by the cross-sectional view 900 of FIG. 9, a first memorycell structure 102 a and a second memory cell structure 102 b arerespectively formed on the bottom electrode vias BV. The first andsecond memory cell structures 102 a, 102 b are separated by aninter-cell area 106 a having a high aspect ratio (i.e., a high ratio ofheight H to width W₁). The HAR may, for example, be greater than about1:1, 2:1, 5:1, 10:1, or some other suitable ratio(s). The first andsecond memory cell structures 102 a, 102 b comprise individual bottomelectrodes 202, individual data storage elements 204, individual topelectrodes 206, individual hard masks 208, and individual sidewallspacers 210. Note that only one of the bottom electrodes 202, only oneof the data storage elements 204, only one of the top electrodes 206,only one of the hard masks 208, and only one of the sidewall spacers 210are labeled. The bottom electrodes 202, the data storage elements 204,the top electrodes 206, and the hard masks 208 are stacked upon eachother and the sidewall spacers 210 line sidewalls of the stack.

In some embodiment, a process for forming the first and second memorycell structures 102 a, 102 b comprises: 1) depositing a bottom electrodelayer over the via dielectric layer 114 and the bottom electrode viasBV; 2) depositing a data storage layer over the bottom electrode layer;3) depositing a top electrode layer over the data storage layer; 4)depositing a hard mask layer over the top electrode layer; 5) patterningthe bottom electrode layer, the data storage layer, the top electrodelayer, and the hard mask layer respectively into the bottom electrodes202, the data storage elements 204, the top electrodes 206, and the hardmasks 208; 6) depositing a sidewall spacer layer; and 7) etching backthe sidewall spacer layer to form the sidewall spacers 210. Otherprocesses for forming the first and second memory cell structures 102 a,102 b are, however, amenable in alternative embodiments.

While FIGS. 8 and 9 illustrate formation of the first and second memorycell structures 102 a, 102 b and the bottom electrode vias BV accordingto embodiments in FIG. 2, embodiments of the first and second memorycell structures 102 a, 102 b in FIG. 3D and/or FIG. 3E may alternativelybe formed.

As illustrated by the cross-sectional view 1000 of FIG. 10, an etch stoplayer 216 is formed over the first and second memory cell structures 102a, 102 b. The etch stop layer 216 lines the first and second memory cellstructures 102 a, 102 b, and further lines the inter-cell area 106 awithout completely filling the inter-cell area 106 a. In someembodiments, a thickness T₂ of the etch stop layer 216 is about 150angstroms, about 100-200 angstroms, or some other suitable value orrange of values. The etch stop layer 216 may, for example, be orcomprise silicon carbide, the same material as the via dielectric layer114, some other suitable dielectric material(s), or any combination ofthe foregoing. The etch stop layer 216 may, for example, be formed byvapor deposition and/or some other suitable deposition process(es).

Also illustrated by the cross-sectional view 1000 of FIG. 10, aninter-cell filler layer 108 is formed covering the etch stop layer 216and filling the inter-cell area 106 a over the etch stop layer 216. Insome embodiments, a thickness T₃ of the inter-cell filler layer 108 isabout 1500 angstroms, about 600-2000 angstroms, greater than about 2000angstroms, or some other suitable value or range of values. Theinter-cell filler layer 108 may, for example, be or comprise TEOS oxideand/or some other suitable dielectric material(s).

The inter-cell filler layer 108 is formed by a HAR deposition process sothe inter-cell filler layer 108 forms without a void at the inter-cellarea 106 a. A HAR deposition process is less likely to form voids in HARareas than a non-HAR deposition process. The non-HAR deposition processmay, for example, be or comprise a low-pressure chemical vapordeposition (LPCVD) process or some other suitable non-HAR depositionprocess. The HAR deposition process may, for example, be or comprise asub atmospheric chemical vapor deposition (SA-CVD) process using TEOSand ozone precursors, a high-density plasma chemical vapor deposition(HDP-CVD) process, an HDR chemical vapor deposition (HDR-CVD) processusing a TEOS precursor, some other suitable HAR and/or HDR depositionprocess, or any combination of the foregoing. An HDR deposition processmay, for example, be a process with a deposition rate that is at leastabout 3, 5, or 10 times greater than a non-HDR deposition process. Thenon-HDR deposition process may, for example, be or comprise a LPCVDprocess or some other suitable non-HDR process. The HDR depositionprocess may, for example, be or comprise a SA-CVD process using a TEOSprecursor or some other suitable HDR deposition process. In someembodiments, the HAR and/or HDR deposition process is/are conformal.

As illustrated by the cross-sectional view 1100 of FIG. 11, theinter-cell filler layer 108 is etched back until a top surface of theinter-cell filler layer 108 is below top surfaces of the first andsecond memory cell structures 102 a, 102 b. During the etch back, theetch stop layer 216 serves as an etch stop to prevent damage to thefirst and second memory cell structures 102 a, 102 b and the thicknessT₂ of the etch stop layer 216 is reduced. The etch back clears theinter-cell filler layer 108 from the peripheral region 506, and furtherclears the inter-cell filler layer 108 from atop the first and secondmemory cell structures 102 a, 102 b. However, the etch back does notclear the inter-cell filler layer 108 from the inter-cell area 106 a.

Due to differences in topography, the inter-cell filler layer 108 formswith a greater thickness at the inter-cell area 106 a than at theperipheral region 506 and atop the first and second memory cellstructures 102 a, 102 b. See, for example, FIG. 10. Accordingly, theetch back would have to persist longer to clear the inter-cell fillerlayer 108 from the inter-cell area 106 a than from the peripheral region506 and atop the first and second memory cell structures 102 a, 102 b.However, the etch back stops after clearing inter-cell filler layer 108from the peripheral region 506 and atop the first and second memory cellstructures, but before clearing the inter-cell filler layer 108 from theinter-cell area 106 a.

As illustrated by the cross-sectional view 1200 of FIG. 12, an upperinterconnect dielectric liner 218 is formed over the etch stop layer 216and the inter-cell filler layer 108. The upper interconnect dielectricliner 218 lines the etch stop layer 216, and further lines a remainderof the inter-cell area 106 a without completely filling the remainder ofthe inter-cell area 106 a. In some embodiments, a thickness T₄ of theupper interconnect dielectric liner 218 is about 150 angstroms, about100-200 angstroms, or some other suitable value or range of values. Theupper interconnect dielectric liner 218 may, for example, be or compriseTEOS oxide, the same material as the inter-cell filler layer 108, someother suitable dielectric(s), or any combination of the foregoing. Theupper interconnect dielectric liner 218 may, for example, be formed byvapor deposition and/or some other suitable deposition process(es). Insome embodiments, the upper interconnect dielectric liner 218 and theinter-cell filler layer 108 are or comprise TEOS oxide and the upperinterconnect dielectric liner 218 is deposited at a slower rate than theinter-cell filler layer 108. For example, the upper interconnectdielectric liner 218 may be formed by a LPCVD process using a TEOSprecursor or some other suitable non-HDR deposition process, whereas theinter-cell filler layer 108 may be formed by a SA-CVD process using aTEOS precursor or some other suitable HDR deposition process.

As illustrated by the cross-sectional view 1200 of FIG. 12, an upperinterconnect dielectric layer 110 is formed covering the upperinterconnect dielectric liner 218 and filling a remainder of theinter-cell area 106 a. The upper interconnect dielectric layer 110 may,for example, be or comprises an ELK dielectric material and/or someother suitable dielectric material(s). The ELK dielectric material may,for example, have a dielectric constant less than about 2.5, 2.0, orsome other suitable value and/or may, for example, be or comprise porousSiOC and/or some other suitable ELK dielectric material(s). In someembodiments, a thickness T₅ of the upper interconnect dielectric layer110 is about 2650 angstroms, about 2560 angstroms, about 2000-3000angstroms, or some other suitable value or range of values. The upperinterconnect dielectric layer 110 may, for example, be formed by vapordeposition and/or some other suitable deposition process(es). In someembodiments, the upper interconnect dielectric layer 110 is formed byLPCVD or some other suitable non-HAR and/or non-HDR deposition process.In some embodiments, the upper interconnect dielectric layer 110 isdeposited at a slower rate than the inter-cell filler layer 108. Forexample, the upper interconnect dielectric layer 110 may be formed by aLPCVD process and the inter-cell filler layer 108 may be formed by aSA-CVD process using a TEOS precursor or some other suitable HDRdeposition process.

Because the inter-cell area 106 a has a HAR, the upper interconnectdielectric layer 110 would form with a void at the inter-cell area 106 aif the inter-cell filler layer 108 were omitted. However, because theinter-cell filler layer 108 partially fills the inter-cell area 106 a, aremainder of the inter-cell area 106 a has a comparatively low aspectratio. Accordingly, the upper interconnect dielectric layer 110 formswithout a void at the inter-cell area 106 a. A void at the inter-cellarea 106 a would be electrically insulating but would have a lowerdielectric constant than the upper interconnect dielectric layer 110 andwould hence be more prone to dielectric breakdown that leads to leakagecurrent. Hence, by forming the upper interconnect dielectric layer 110without a void at the inter-cell area 106 a, leakage current is reducedat the inter-cell area 106 a and other like areas in a memory array.

As illustrated by the cross-sectional view 1300 of FIG. 13, the upperinterconnect dielectric layer 110, the upper interconnect dielectricliner 218, the etch stop layer 216, the hard masks 208, and the viadielectric layer 114 are patterned to form via openings 1302. The viaopenings 1302 expose the top electrodes 206 and further expose at leastone of the wires 118 at the peripheral region 506. The patterning may,for example, be performed by a photolithography/etching process or someother suitable patterning process. In some embodiments, thephotolithography/etching process comprises: 1) forming a first mask 1304on the upper interconnect dielectric layer 110 and with a layout of thevia openings 1302; 2) performing an etch into the aforementioned layers(e.g., the upper interconnect dielectric layer 110) with the first mask1304 in place; and 3) fully or partially removing the first mask 1304.The first mask 1304 may be or comprise, for example, photoresist and/ora hard mask material.

As illustrated by the cross-sectional views 1400, 1500 of FIGS. 14 and15, the upper interconnect dielectric layer 110 is patterned to formwire openings 1502 (see FIG. 15) overlapping with the via openings 1302(see FIG. 14). The patterning may, for example, be performed by aphotolithography/etching process or some other suitable patterningprocess. In some embodiments, the photolithography/etching processcomprises: 1) forming a second mask 1402 on the upper interconnectdielectric layer 110 and with a layout of the wire openings 1502; 2)performing an etch into the upper interconnect dielectric layer 110 withthe second mask 1402 in place; and 3) fully or partially removing thesecond mask 1402. The second mask 1402 may be or comprise, for example,photoresist and/or a hard mask material.

As illustrated the cross-sectional view 1600 of FIG. 16, a conductivelayer 1602 is formed filling the via openings 1302 (see FIG. 14) and thewire openings 1502 (see FIG. 15). The conductive layer 1602 may, forexample, be formed by vapor deposition, electroplating, electrolessplating, some other suitable deposition process, or any combination ofthe foregoing.

As illustrated by the cross-sectional view 1700 of FIG. 17, aplanarization is performed into the conductive layer 1602 (see FIG. 16)to form additional wires 118 and additional vias 120. For clarity, thehashing has been changed between the additional wires 118 and theadditional vias 120, notwithstanding that the additional wires 118 andthe additional vias 120 are continuous with each other. The additionalwires 118 comprise conductive lines CL respectively overlying andelectrically coupled to the first and second memory cell structures 102a, 102 b by the additional vias 120. The planarization may, for example,be performed by a chemical mechanical polish (CMP) and/or some othersuitable planarization.

While FIGS. 7-17 are described with reference to a method, it will beappreciated that the structures shown in FIGS. 7-17 are not limited tothe method but rather may stand alone separate of the method. Further,while FIGS. 7-17 are described as a series of acts, it will beappreciated that the order of the acts can be altered in otherembodiments. In other embodiments, some acts that are illustrated and/ordescribed may be omitted in whole or in part. For example, the etch backat FIG. 11 may be omitted to form embodiments of the integrated chip atFIG. 3A. In other embodiments, additional acts that are not illustratedand/or described may be performed. For example, the etch back at FIG. 11may be omitted and a planarization may be performed between the acts ofFIGS. 10 and 12 to form the integrated chip at FIG. 3B. As anotherexample, the etch back at FIG. 11 may be performed and a planarizationmay be performed between the acts of FIGS. 10 and 11 to form theintegrated chip at FIG. 3C. The planarization in both examples may, forexample, flatten a top surface of upper interconnect dielectric layer110 and/or may, for example, be performed by a CMP or some othersuitable planarization process. In some embodiments, the methodsdisclosed by FIGS. 7-17 are applied to form other structures.

With reference to FIG. 18, a block diagram 1800 of some embodiments ofthe method of FIGS. 7-17 is provided.

At 1802, an interconnect structure is partially formed over a substrate,where the interconnect structure comprises a first wire and a secondwire, and where the first and second wires neighbor along a top surfaceof the interconnect structure. See, for example, FIG. 7.

At 1804, a via dielectric layer is formed covering the interconnectstructure. See, for example, FIG. 7.

At 1806, a first bottom electrode via and a second bottom electrode viaare formed extending through the via dielectric layer respectively tothe first and second wires. See, for example, FIG. 8.

At 1808, a first memory cell structure and a second memory cellstructure are respectively formed on the first and second bottomelectrode vias, where an inter-cell area between the first and secondmemory cell structures has a HAR. See, for example, FIG. 9. Inalternative embodiments, the first and second memory cell structures areformed respectively integrated with the first and second bottomelectrode vias. Non-limiting examples of such integrated are illustratedin FIGS. 3D and 3D.

At 1810, an inter-cell filler layer is formed covering the first andsecond memory cell structures and the via dielectric layer, where theinter-cell filler layer is formed by a HAR deposition process. See, forexample, FIG. 10. The HAR deposition process may, for example, be orcomprise a SA-CVD process using TEOS andozone precursors, a HDP-CVDprocess, an HDR-CVD process using a TEOS precursor, some other suitableHAR and/or HDR deposition process, or any combination of the foregoing.

At 1812, the inter-cell filler layer is etched back until a top surfaceof the inter-cell filler layer is recessed below top surfaces of thefirst and second memory cell structures. See, for example, FIG. 11. Inalternative embodiments, a planarization is performed into a top surfaceof the inter-cell filler layer between the acts at 1810 and 1812 and/orthe etch back is omitted.

At 1814, the interconnect structure is completed around the first andsecond memory cell structures and the via dielectric layer. See, forexample, FIGS. 12-17.

While the block diagram 1800 of FIG. 18 is illustrated and describedherein as a series of acts or events, it will be appreciated that theillustrated ordering of such acts or events is not to be interpreted ina limiting sense. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. Further, not all illustrated actsmay be required to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

In some embodiments, the present application provides a methodincluding: forming a pair of memory cell structures on a via dielectriclayer, wherein the memory cell structures are separated by an inter-cellarea; depositing an inter-cell filler layer covering the memory cellstructures and the via dielectric layer, and further filling theinter-cell area; recessing the inter-cell filler layer until a topsurface of the inter-cell filler layer is below a top surface of thepair of memory cell structures and the inter-cell area is partiallycleared; and depositing an interconnect dielectric layer covering thememory cell structures and the inter-cell filler layer, and furtherfilling a cleared portion of the inter-cell area. In some embodiments,the inter-cell area has a ratio of height to width greater than about2:1, wherein the inter-cell filler layer and the interconnect dielectriclayer form without a void at the inter-cell area. In some embodiments,the inter-cell filler layer is deposited by a SA-CVD process using aTEOS precursor. In some embodiments, the interconnect dielectric layeris deposited at a slower rate than the inter-cell filler layer. In someembodiments, the pair of memory cell structures include a first memorycell structure, wherein the inter-cell filler layer has a firstthickness on a first side of the first memory cell structure, andfurther has a second thickness on a second side of the first memory cellstructure, wherein the second side is opposite the first side and facesthe inter-cell area, and wherein the second thickness is greater thanthe first thickness. In some embodiments, the recessing fully removesthe inter-cell filler layer from the first side, but not the secondside, of the first memory cell structure. In some embodiments, themethod further includes depositing an interconnect dielectric liner overthe inter-cell filler layer and at a first rate, wherein theinterconnect dielectric layer is deposited over the interconnectdielectric liner, wherein the inter-cell filler layer is deposited at asecond rate greater than the first rate, and wherein the interconnectdielectric liner and the inter-cell filler layer include the samematerial. In some embodiments, the pair of memory cell structuresinclude a first memory cell structure, wherein the method furtherincludes: forming a conductive line and a via overlying the first memorycell structure and inset into the interconnect dielectric layer, whereinthe conductive line and the via are formed from a common deposition, andwherein the via extends from the conductive line to the first memorycell structure.

In some embodiments, the present application provides an integrated chipincluding: a pair of wires; a first memory cell structure and a secondmemory cell structure over the wires; an inter-cell filler layerseparating the first and second memory cell structures and having a topsurface recessed below a top surface of the first memory cell structure,wherein the inter-cell filler layer is on a first side of the firstmemory cell structure facing the second memory cell structure, but isnot on a second side of the first memory cell structure opposite thefirst side; and an interconnect dielectric layer overlying the first andsecond memory cell structures and the inter-cell filler layer, andfurther extending towards the top surface of the inter-cell filler layerto below the top surface of the first memory cell structure. In someembodiments, the top surface of the inter-cell filler layer arcscontinuously from proximate the first memory cell structure to proximatethe second memory cell structure. In some embodiments, the integratedchip further includes an array of memory cell structures, wherein thearray includes the first and second memory cell structures, and whereinthe inter-cell filler layer has a top layout that is grid shaped andterminates at edges of the array. In some embodiments, the integratedchip further includes: a conductive line overlying the first memory cellstructure and sunken into the interconnect dielectric layer; and a viawithin the interconnect dielectric layer and extending from theconductive line to the first memory cell structure. In some embodiments,the conductive line overlies the second memory cell structure, whereinthe conductive line has a downward protrusion laterally between thefirst and second memory cell structures. In some embodiments, theinter-cell filler layer includes TEOS oxide, wherein the interconnectdielectric layer includes a dielectric material having a dielectricconstant less than about 2.0. In some embodiments, the first and secondmemory cell structures have a height and are separated by a separationamount, wherein a ratio of the height to the separation amount isgreater than about 2.5:1, and wherein the inter-cell filler layer andthe interconnect dielectric layer are free of voids laterally betweenthe first and second memory cell structures.

In some embodiments, the present application provides another integratedchip including: a pair of wires; a first memory cell structure and asecond memory cell structure overlying the wires; an inter-cell fillerlayer overlying the first and second memory cell structures and fillingan inter-cell area directly between the first and second memory cellstructures, wherein the inter-cell filler layer has a greater thicknessat the inter-cell area than atop the first and second memory cellstructures; an interconnect dielectric layer overlying the inter-cellfiller layer, wherein the interconnect dielectric layer has a dielectricconstant less than that of the inter-cell filler layer; a conductiveline inset into the interconnect dielectric layer; and a via extendingfrom the conductive line, through the inter-cell filler layer, to thefirst memory cell structure. In some embodiments, the conductive lineoverlies the second memory cell structure, wherein the inter-cell fillerlayer has a top surface that is indented laterally between the first andsecond memory cell structures. In some embodiments, the conductive lineoverlies the second memory cell structure, wherein the inter-cell fillerlayer has a top surface that is substantially planar from directly overthe first memory cell structure to directly over the second memory cellstructure. In some embodiments, a top surface of the via is elevatedabove a top surface of the inter-cell filler layer. In some embodiments,the inter-cell filler layer includes TEOS oxide, wherein theinterconnect dielectric layer includes a dielectric material having adielectric constant less than about 2.5.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-8. (canceled)
 9. An integrated chip comprising: a pair of wires; afirst memory cell structure and a second memory cell structure over thewires; an inter-cell filler layer separating the first and second memorycell structures and having a top surface recessed below a top surface ofthe first memory cell structure, wherein the inter-cell filler layer ison a first side of the first memory cell structure facing the secondmemory cell structure, but is not on a second side of the first memorycell structure opposite the first side; and an interconnect dielectriclayer overlying the first and second memory cell structures and theinter-cell filler layer, and further extending towards the top surfaceof the inter-cell filler layer to below the top surface of the firstmemory cell structure.
 10. The integrated chip according to claim 9,wherein the top surface of the inter-cell filler layer arcs continuouslyfrom proximate the first memory cell structure to proximate the secondmemory cell structure.
 11. The integrated chip according to claim 9,further comprising: an array of memory cell structures, wherein thearray comprises the first and second memory cell structures, and whereinthe inter-cell filler layer has a top layout that is grid shaped andterminates at edges of the array.
 12. The integrated chip according toclaim 9, further comprising: a conductive line overlying the firstmemory cell structure and sunken into the interconnect dielectric layer;and a via within the interconnect dielectric layer and extending fromthe conductive line to the first memory cell structure.
 13. Theintegrated chip according to claim 12, wherein the conductive lineoverlies the second memory cell structure, and wherein the conductiveline has a downward protrusion laterally between the first and secondmemory cell structures.
 14. The integrated chip according to claim 9,wherein the inter-cell filler layer comprises tetraethyl orthosilicate(TEOS) oxide, and wherein the interconnect dielectric layer comprises adielectric material having a dielectric constant less than about 2.0.15. The integrated chip according to claim 9, wherein the first andsecond memory cell structures have a height and are separated by aseparation amount, wherein a ratio of the height to the separationamount is greater than about 2.5:1, and wherein the inter-cell fillerlayer and the interconnect dielectric layer are free of voids laterallybetween the first and second memory cell structures.
 16. An integratedchip comprising: a pair of wires; a first memory cell structure and asecond memory cell structure overlying the wires; an inter-cell fillerlayer overlying the first and second memory cell structures and fillingan inter-cell area directly between the first and second memory cellstructures, wherein the inter-cell filler layer has a greater thicknessat the inter-cell area than atop the first and second memory cellstructures; an interconnect dielectric layer overlying the inter-cellfiller layer, wherein the interconnect dielectric layer has a dielectricconstant less than that of the inter-cell filler layer; a conductiveline inset into the interconnect dielectric layer; and a via extendingfrom the conductive line, through the inter-cell filler layer, to thefirst memory cell structure.
 17. The integrated chip according to claim16, wherein the conductive line overlies the second memory cellstructure, and wherein the inter-cell filler layer has a top surfacethat is indented laterally between the first and second memory cellstructures.
 18. The integrated chip according to claim 16, wherein theconductive line overlies the second memory cell structure, and whereinthe inter-cell filler layer has a top surface that is substantiallyplanar from directly over the first memory cell structure to directlyover the second memory cell structure.
 19. The integrated chip accordingto claim 16, wherein a top surface of the via is elevated above a topsurface of the inter-cell filler layer.
 20. The integrated chipaccording to claim 16, wherein the inter-cell filler layer comprisestetraethyl orthosilicate (TEOS) oxide, and wherein the interconnectdielectric layer comprises a dielectric material having a dielectricconstant less than about 2.5.
 21. An integrated chip comprising: a lowerwire; a via dielectric layer overlying the lower wire; a first memorycell and a second memory cell overlying the via dielectric layer andbordering, wherein the first memory cell comprises a data storage layer;a lower via extending from the first memory cell to the lower wire; agap-fill dielectric layer laterally separating the first and secondmemory cells, wherein a height of the gap-fill dielectric layer extendsvertically from a first elevation to a second elevation at a centerbetween the first and second memory cells; an interconnect dielectriclayer overlying the first and second memory cells and the gap-filldielectric layer, wherein the interconnect dielectric layer has a lowdielectric constant relative to the gap-fill dielectric layer; an upperwire inset into a top surface of the interconnect dielectric layer andhaving a bottom surface elevated above a top surface of the gap-filldielectric layer; and an upper via extending from the upper wire to thefirst memory cell; wherein the data storage layer has a sidewall facingthe gap-fill dielectric layer, and wherein the first and secondelevations are respectively above a top edge of the sidewall and below abottom edge of the sidewall.
 22. The integrated chip according to claim21, wherein the top surface of the gap-fill dielectric layer iscompletely recessed relative to a top surface of the first memory cell.23. The integrated chip according to claim 21, wherein the gap-filldielectric layer overlies the first and second memory cells, and whereinthe upper via laterally and directly contacts both the interconnectdielectric layer and the gap-fill dielectric layer.
 24. The integratedchip according to claim 23, wherein the top surface of the gap-filldielectric layer is substantially planar.
 25. The integrated chipaccording to claim 21, wherein the gap-fill dielectric layer has a firstsidewall and a second sidewall respectively bordering the first andsecond memory cells, and wherein the height increases continuously fromthe center to a bottom edge of each of the first and second sidewalls.26. The integrated chip according to claim 25, wherein the heightdecreases continuously from the bottom edge of the first sidewall to atop edge of the first sidewall.
 27. The integrated chip according toclaim 21, wherein the gap-fill dielectric layer has a first sidewall anda second sidewall respectively bordering the first and second memorycells, and wherein the height is uniform from the center to a bottomedge of each of the first and second sidewalls.
 28. The integrated chipaccording to claim 21, further comprising: an array of memory cellsoverlying the via dielectric layer, wherein the array includes the firstand second memory cells bordering in a row of the array, wherein thearray further includes a third memory cell bordering the first memorycell in a column of the array, wherein the gap-fill dielectric layer hasa first dimension along the row and directly between the first andsecond memory cells, wherein the gap-fill dielectric layer has a seconddimension along the column and directly between the first and thirdmemory cells, and wherein the second dimension is greater than the firstdimension.